IXGX32N170AH1

new-10%

Manufacturer part number:IXGX32N170AH1

Manufacturer:IXYS

Description:IGBT 1700V 32A 350W PLUS247

Case Package:SOT-23

Datasheet:IXGX32N170AH1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	350W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*32N170
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	32A
Reverse Recovery Time	150 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	4V
Turn On Time	74 ns
Test Condition	850V, 32A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	5V @ 15V, 21A
Turn Off Time-Nom (toff)	362 ns
IGBT Type	NPT
Gate Charge	157nC
Current - Collector Pulsed (Icm)	110A
Td (on/off) @ 25°C	27ns/270ns
Switching Energy	4.1mJ (on), 1.25mJ (off)
RoHS Status	RoHS Compliant