TIG110BF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
TIG110BF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Packaging
Bulk
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
2W
Pin Count
3
Operating Temperature (Max)
150°C
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
2W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
27A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
300 ns
Test Condition
300V, 15A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 15A
Turn Off Time-Nom (toff)
450 ns
IGBT Type
NPT
Gate Charge
95nC
Current - Collector Pulsed (Icm)
108A
Td (on/off) @ 25°C
65ns/250ns
Gate-Emitter Thr Voltage-Max
6V
Radiation Hardening
No
RoHS Status
RoHS Compliant
TIG110BF Product Details
TIG110BF Description
These devices, sometimes known as IGBTs, were produced using the cutting-edge and distinctive trench gate fieldstop structure. These parts are from the most recent generation of IGBTs, the HB series, which maximizes the efficiency of any frequency converter by providing the best conduction and switching loss trade-offs.