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TIG110BF

TIG110BF

TIG110BF

ON Semiconductor

TIG110BF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

TIG110BF Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2W
Pin Count 3
Operating Temperature (Max) 150°C
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 2W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 27A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 300 ns
Test Condition 300V, 15A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
Gate Charge 95nC
Current - Collector Pulsed (Icm) 108A
Td (on/off) @ 25°C 65ns/250ns
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
TIG110BF Product Details

TIG110BF Description


These devices, sometimes known as IGBTs, were produced using the cutting-edge and distinctive trench gate fieldstop structure. These parts are from the most recent generation of IGBTs, the HB series, which maximizes the efficiency of any frequency converter by providing the best conduction and switching loss trade-offs.



TIG110BF Features


  • The amplifier has a built-in current limit.

  • Overheating prevention



TIG110BF Applications


Switching applications


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