IXKC25N80C

new-10%

Manufacturer part number:IXKC25N80C

Manufacturer:IXYS

Description:Trans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 220

Case Package:SOT-23

Datasheet:IXKC25N80C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	CoolMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	25A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	690 mJ
FET Feature	Super Junction
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free