IXSX40N60BD1

new-10%

Manufacturer part number:IXSX40N60BD1

Manufacturer:IXYS

Description:IGBT 600V 75A 280W PLUS247

Case Package:SOT-23

Datasheet:IXSX40N60BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	7.300002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW SATURATION VOLTAGE
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	280W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*40N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	280W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	100 ns
Test Condition	480V, 40A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	190nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	50ns/110ns
Switching Energy	1.8mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	200ns
RoHS Status	RoHS Compliant