IRGS4615DTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS4615DTRLPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
99W
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Element Configuration
Single
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.85V
Max Collector Current
15A
Reverse Recovery Time
60 ns
Collector Emitter Breakdown Voltage
600V
Current - Collector (Ic) (Max)
23A
Collector Emitter Saturation Voltage
2V
Test Condition
400V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 8A
Gate Charge
19nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
30ns/95ns
Switching Energy
70μJ (on), 145μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
RoHS Compliant
IRGS4615DTRLPBF Product Details
IRGS4615DTRLPBF Description
IRGS4615DTRLPBF is an N-channel 600V insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGS4615DTRLPBF offers improved reliability due to rugged hard switching performance and higher power capability. The IRGS4615DTRLPBF can be applied in Appliance Drives, Inverters, and UPS applications due to the following features. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGS4615DTRLPBF is in the D2-Pak package with 99W power dissipation.
IRGS4615DTRLPBF Features
LoW VcE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C.
Positive VcE(ON) temperature coefficient and tighter distribution of parameters