IXTA10P15T

new-10%

Manufacturer part number:IXTA10P15T

Manufacturer:IXYS

Description:DISCMSFT PCHAN-TRENCH GATE TO-26

Case Package:SOT-23

Datasheet:IXTA10P15T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	2
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2210pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	0.35Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	RoHS Compliant