Description

The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH? MOSFET, 100 V, 268 A, 1.7 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH process from ON Semiconductor, which combines Shielded Gate technology. With the best-in-class soft body diode, this method has been refined to reduce on-state resistance while maintaining exceptional switching performance.

Features

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A

• Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A

• Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A

• Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A

Applications

• Battery Operated Tools

• Battery Protection

• Solar Inverters

• UPS and Energy Inverters

• Energy Storage

• Load Switch

• Industrial Motor Drive

• Industrial Power Supply

• Industrial Automation