IXTA1R6N100D2HV

new-10%

Manufacturer part number:IXTA1R6N100D2HV

Manufacturer:IXYS

Description:MOSFET N-CH

Case Package:SOT-23

Datasheet:IXTA1R6N100D2HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Power Dissipation-Max	100W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	10 Ω @ 800mA, 0V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	645pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.6A Tj
Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	0V
Vgs (Max)	±20V
FET Feature	Depletion Mode