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IXTA1R6N100D2HV

IXTA1R6N100D2HV

IXTA1R6N100D2HV

IXYS

MOSFET N-CH

SOT-23

IXTA1R6N100D2HV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 100W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 800mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Tj
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
FET Feature Depletion Mode
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.691188 $4.691188
10 $4.425649 $44.25649
100 $4.175140 $417.514
500 $3.938812 $1969.406
1000 $3.715860 $3715.86

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