DMN65D8LFB-7B

new-10%

Manufacturer part number:DMN65D8LFB-7B

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 260MA 3DFN

Case Package:SOT-23

Datasheet:DMN65D8LFB-7B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-UFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	430mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	840mW
Case Connection	DRAIN
Turn On Delay Time	3.27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Ta
Rise Time	3.15ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.29 ns
Turn-Off Delay Time	12.025 ns
Continuous Drain Current (ID)	400mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.26A
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	60V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free