Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXTA36P15P

IXTA36P15P

IXTA36P15P

IXYS

MOSFET (Metal Oxide) P-Channel Tube 110m Ω @ 18A, 10V ±20V 3100pF @ 25V 55nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IXTA36P15P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarP™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -150V
Pulsed Drain Current-Max (IDM) 90A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.445870 $5.44587
10 $5.137612 $51.37612
100 $4.846804 $484.6804
500 $4.572457 $2286.2285
1000 $4.313639 $4313.639
IXTA36P15P Product Details

IXTA36P15P Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -150V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTA36P15P Features


a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 90A.
a 150V drain to source voltage (Vdss)


IXTA36P15P Applications


There are a lot of IXYS
IXTA36P15P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News