IPP80N06S208AKSA2

new-10%

Manufacturer part number:IPP80N06S208AKSA2

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP80N06S208AKSA2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	OptiMOS™
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Voltage	55V
Power Dissipation-Max	215W Tc
Element Configuration	Single
Current	80A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	215W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8m Ω @ 58A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	450 mJ
RoHS Status	ROHS3 Compliant