IXTA4N60P

new-10%

Manufacturer part number:IXTA4N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 4A D2-PAK

Case Package:SOT-23

Datasheet:IXTA4N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	89W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	635pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	2Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	150 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free