IXTA5N60P

new-10%

Manufacturer part number:IXTA5N60P

Manufacturer:IXYS

Description:MOSFET N-CH 600V 5A D2-PAK

Case Package:SOT-23

Datasheet:IXTA5N60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	100W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.7 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	14.2nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	360 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free