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IRFH5206TRPBF

IRFH5206TRPBF

IRFH5206TRPBF

Infineon Technologies

MOSFET N-CH 60V 16A 8-PQFN

SOT-23

IRFH5206TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 6.7MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 6.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.2 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 89A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 350A
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.766723 $0.766723
10 $0.723324 $7.23324
100 $0.682381 $68.2381
500 $0.643756 $321.878
1000 $0.607317 $607.317

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