IXTA80N12T2

new-10%

Manufacturer part number:IXTA80N12T2

Manufacturer:IXYS

Description:MOSFET N-CH 120V 80A TO-263

Case Package:SOT-23

Datasheet:IXTA80N12T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	TrenchT2™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	325W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	120V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
Drain-source On Resistance-Max	0.017Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	120V
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	ROHS3 Compliant