PMV40UN2R

new-10%

Manufacturer part number:PMV40UN2R

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV

Case Package:SOT-23

Datasheet:PMV40UN2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	36mOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	490mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	490mW
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	44m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	635pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	400mV
JEDEC-95 Code	TO-236AB
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Ambient Temperature Range High	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free