IXTD1R4N60P 11

new-10%

Manufacturer part number:IXTD1R4N60P 11

Manufacturer:IXYS

Description:MOSFET N-CH 600V

Case Package:SOT-23

Datasheet:IXTD1R4N60P 11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PolarHV™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	50W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V