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IXTD3N60P-2J

  • IXTD3N60P-2J
  • IXTD3N60P-2J

IXTD3N60P-2J

IXTD3N60P-2J

IXYS

MOSFET N-CH 600

SOT-23

IXTD3N60P-2J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Series PolarHV™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 70W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.9 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 411pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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