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IXTH06N220P3HV

IXTH06N220P3HV

IXTH06N220P3HV

IXYS

MOSFET N-CH

SOT-23

IXTH06N220P3HV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 104W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 600mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Drain to Source Voltage (Vdss) 2200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $15.54000 $466.2

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