IXTH13N110

new-10%

Manufacturer part number:IXTH13N110

Manufacturer:IXYS

Description:MOSFET N-CH 1.1KV 13A TO-247AD

Case Package:SOT-23

Datasheet:IXTH13N110 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	MegaMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Resistance	920mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	1.1kV
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	13A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	920m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	1100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	13A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1.1kV
Pulsed Drain Current-Max (IDM)	52A
RoHS Status	RoHS Compliant
Lead Free	Lead Free