SI1073X-T1-GE3

new-10%

Manufacturer part number:SI1073X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 0.98A SC89-6

Case Package:SOT-23

Datasheet:SI1073X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	173MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	236mW
Turn On Delay Time	26 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	173m Ω @ 980mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	9.45nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	-980mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.98A
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free