IXTH3N200P3HV

new-10%

Manufacturer part number:IXTH3N200P3HV

Manufacturer:IXYS

Description:MOSFET N-CH 2000V 3A TO-247

Case Package:SOT-23

Datasheet:IXTH3N200P3HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	520W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	2000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free