IXTK110N30

new-10%

Manufacturer part number:IXTK110N30

Manufacturer:IXYS

Description:MOSFET N-CH 300V 110A TO-264

Case Package:SOT-23

Datasheet:IXTK110N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	MegaMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	730W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	730W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	26m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	390nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.026Ohm
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	440A
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	ROHS3 Compliant