SI7601DN-T1-E3

new-10%

Manufacturer part number:SI7601DN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 16A 1212-8

Case Package:SOT-23

Datasheet:SI7601DN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Supplier Device Package	PowerPAK® 1212-8
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-50°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 52W Tc
Element Configuration	Single
Power Dissipation	3.8W
Turn On Delay Time	18 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	19.2mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 5V
Rise Time	112ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	11.5A
Gate to Source Voltage (Vgs)	12V
Input Capacitance	1.87nF
Drain to Source Resistance	19mOhm
Rds On Max	19.2 mΩ
Height	1.04mm
Length	3.05mm
Width	3.05mm
RoHS Status	ROHS3 Compliant