IXTK170P10P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 12600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 170A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-100V. And this device has -100V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 510A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTK170P10P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of -100V voltage
based on its rated peak drain current 510A.
a 100V drain to source voltage (Vdss)
IXTK170P10P Applications
There are a lot of IXYS
IXTK170P10P applications of single MOSFETs transistors.
- LCD/LED TV
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- Consumer Appliances
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- Lighting
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- Uninterruptible Power Supply
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- AC-DC Power Supply
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- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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