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NVD5C648NLT4G

NVD5C648NLT4G

NVD5C648NLT4G

ON Semiconductor

NVD5C648NLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVD5C648NLT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.1W Ta 72W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.69316 $1.38632
NVD5C648NLT4G Product Details

NVD5C648NLT4G Features

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

AEC?Q101 Qualified and PPAP Capable

These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant


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