IXTK250N10

new-10%

Manufacturer part number:IXTK250N10

Manufacturer:IXYS

Description:MOSFET N-CH 100V 250A TO-264AA

Case Package:SOT-23

Datasheet:IXTK250N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Series	MegaMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	730W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	730W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	250A Tc
Gate Charge (Qg) (Max) @ Vgs	430nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	250A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.005Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	1000A
Avalanche Energy Rating (Eas)	4000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free