IPW65R150CFDFKSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPW65R150CFDFKSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Series
CoolMOS™ CFD2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
195.3W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds
2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C
22.4A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$3.39625
$815.1
IPW65R150CFDFKSA2 Product Details
IPW65R150CFDFKSA2 Description
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS TM CFD2 series combines the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all benefits of a fast-switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation, and conduction losses together with the highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.
IPW65R150CFDFKSA2 Features
Ultra-fast body diode
Very high commutation ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Easy to use/drive
Qualified for industrial-grade applications according to JEDEC(J-STD20 and JESD22)