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IXTP20N65X

IXTP20N65X

IXTP20N65X

IXYS

MOSFET N-CH 650V 20A TO-220

SOT-23

IXTP20N65X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 320W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 210m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 20A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $5.44500 $272.25

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