IXTP75N10P

new-10%

Manufacturer part number:IXTP75N10P

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXTP75N10P MOSFET Transistor, PolarFET, N Channel, 75 A, 100 V, 25 mohm, 10 V, 5.5 V

Case Package:SOT-23

Datasheet:IXTP75N10P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	25MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	53ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	66 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	5.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	200A
Height	9.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free