IXTP76P10T

new-10%

Manufacturer part number:IXTP76P10T

Manufacturer:IXYS

Description:Trans MOSFET P-CH 100V 76A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:IXTP76P10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	TrenchP™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	298W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	298W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	76A Tc
Gate Charge (Qg) (Max) @ Vgs	197nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	76A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	230A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free