IXTP8N50PM

new-10%

Manufacturer part number:IXTP8N50PM

Manufacturer:IXYS

Description:MOSFET N-CH 500V 4A TO-220

Case Package:SOT-23

Datasheet:IXTP8N50PM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	41W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	41W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	800m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	400 mJ
RoHS Status	RoHS Compliant