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SI6404DQ-T1-GE3

SI6404DQ-T1-GE3

SI6404DQ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 8.6A 8TSSOP

SOT-23

SI6404DQ-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Weight 157.991892mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.08W Ta
Element Configuration Single
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 600mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.6A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 8.6A
Gate to Source Voltage (Vgs) 12V
Drain to Source Resistance 9mOhm
Rds On Max 9 mΩ
Height 1mm
Length 3mm
Width 4.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

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