IXTQ69N30PM

new-10%

Manufacturer part number:IXTQ69N30PM

Manufacturer:IXYS

Description:DISC MOSFET N-CH STD-POLAR TO-3P

Case Package:SOT-23

Datasheet:IXTQ69N30PM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2012
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	90W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4960pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	156nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	25A
Drain-source On Resistance-Max	0.049Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	300V
Avalanche Energy Rating (Eas)	1500 mJ