IAUT165N08S5N029ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IAUT165N08S5N029ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Operating Temperature
-55°C~175°C TJ
Series
OptiMOS™-5
Part Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
167W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
3.8V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds
6370pF @ 40V
Current - Continuous Drain (Id) @ 25°C
165A Tc
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.94000
$2.94
500
$2.9106
$1455.3
1000
$2.8812
$2881.2
1500
$2.8518
$4277.7
2000
$2.8224
$5644.8
2500
$2.793
$6982.5
IAUT165N08S5N029ATMA1 Product Details
IAUT165N08S5N029ATMA1 Description
For applications where the failure or malfunction of the products could directly endanger human life or possibly result in personal injury (such as those involving aircraft and aerospace equipment, traffic and transportation equipment, combustion equipment, medical equipment, accident prevention, anti-crime equipment, and/or safety equipment), it is necessary to follow certain guidelines. Before using our products, please make sure to ask and verify with our inquiry desk whether the specifications of our products fit to such applications use.
IAUT165N08S5N029ATMA1 Features
Endurance:105 ℃ 2000 h to 5000 h
Miniaturized, Low ESR (1 size smaller than series FK)