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IAUT165N08S5N029ATMA1

IAUT165N08S5N029ATMA1

IAUT165N08S5N029ATMA1

Infineon Technologies

IAUT165N08S5N029ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IAUT165N08S5N029ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Operating Temperature -55°C~175°C TJ
Series OptiMOS™-5
Part Status Not For New Designs
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 167W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 6370pF @ 40V
Current - Continuous Drain (Id) @ 25°C 165A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.94000 $2.94
500 $2.9106 $1455.3
1000 $2.8812 $2881.2
1500 $2.8518 $4277.7
2000 $2.8224 $5644.8
2500 $2.793 $6982.5
IAUT165N08S5N029ATMA1 Product Details

IAUT165N08S5N029ATMA1 Description


For applications where the failure or malfunction of the products could directly endanger human life or possibly result in personal injury (such as those involving aircraft and aerospace equipment, traffic and transportation equipment, combustion equipment, medical equipment, accident prevention, anti-crime equipment, and/or safety equipment), it is necessary to follow certain guidelines. Before using our products, please make sure to ask and verify with our inquiry desk whether the specifications of our products fit to such applications use.



IAUT165N08S5N029ATMA1 Features


Endurance:105 ℃ 2000 h to 5000 h

Miniaturized, Low ESR (1 size smaller than series FK)

AEC-Q200 compliant

RoHS compliant



IAUT165N08S5N029ATMA1 Applications


Temperature Measurement

Pressure Measurement

Flow Meters

Factory Automation and Process Control


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