IXTR30N25

new-10%

Manufacturer part number:IXTR30N25

Manufacturer:IXYS

Description:Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) ISOPLUS247

Case Package:SOT-23

Datasheet:IXTR30N25 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	136nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	250V
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	ROHS3 Compliant