BUZ31L

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Manufacturer part number:BUZ31L

Manufacturer:Infineon Technologies

Description:BUZ31L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BUZ31L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	13.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	95W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	95W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 7A, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13.5A Tc
Rise Time	80ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	13.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.2Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	54A
Avalanche Energy Rating (Eas)	200 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free