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STF24NM60N

STF24NM60N

STF24NM60N

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 8A, 10V ±30V 1400pF @ 50V 46nC @ 10V TO-220-3 Full Pack

SOT-23

STF24NM60N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 190MOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF24
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 11.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 16.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 68A
Height 16.4mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.54000 $1.54
STF24NM60N Product Details

Description


The STF24NM60N is an N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages. These gadgets are N-channel Power MOSFETs created with MDmesh? technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the manufacturer's strip layout to produce one of the lowest on-resistance and gate charge values in the whole globe. Therefore, the most demanding high-efficiency converters can use it.



Features


  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance

  • Maximum junction temperature (TJ(max))

  • Continuous drain current (ID)



Applications


  • Switching applications

  • Small motor control

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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