IXTT02N450HV

new-10%

Manufacturer part number:IXTT02N450HV

Manufacturer:IXYS

Description:MOSFET N-CH 4500V 0.2A TO268

Case Package:SOT-23

Datasheet:IXTT02N450HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	113W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	113W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id	6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	256pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Tc
Gate Charge (Qg) (Max) @ Vgs	10.4nC @ 10V
Rise Time	48ns
Drain to Source Voltage (Vdss)	4500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	143 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	625Ohm
Drain to Source Breakdown Voltage	4.5kV
Pulsed Drain Current-Max (IDM)	0.6A
RoHS Status	ROHS3 Compliant