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IXTT16N20D2

IXTT16N20D2

IXTT16N20D2

IXYS

MOSFET (Metal Oxide) N-Channel Tube 73m Ω @ 8A, 0V ±20V 5500pF @ 25V 208nC @ 5V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SOT-23

IXTT16N20D2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 695W Tc
Element Configuration Single
Power Dissipation 695W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 73m Ω @ 8A, 0V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 208nC @ 5V
Rise Time 130ns
Vgs (Max) ±20V
Fall Time (Typ) 135 ns
Turn-Off Delay Time 270 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.073Ohm
Drain to Source Breakdown Voltage 200V
FET Feature Depletion Mode
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.92000 $10.92
10 $9.82800 $98.28
30 $8.95433 $268.6299
120 $8.08083 $969.6996
270 $7.42559 $2004.9093
510 $6.77039 $3452.8989
1,020 $5.89680 $5.8968
IXTT16N20D2 Product Details

IXTT16N20D2 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 16A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [270 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.

IXTT16N20D2 Features


a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 270 ns


IXTT16N20D2 Applications


There are a lot of IXYS
IXTT16N20D2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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