SI7465DP-T1-E3

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SI7465DP-T1-E3

Manufacturer part number:SI7465DP-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 60V 3.2A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7465DP-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	64mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.2A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	-5A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.2A
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	24.2 mJ
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free