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SI7465DP-T1-E3

SI7465DP-T1-E3

SI7465DP-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 3.2A PPAK SO-8

SOT-23

SI7465DP-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 64mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.5W
Case Connection DRAIN
Turn On Delay Time8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) -5A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.2A
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 25A
Avalanche Energy Rating (Eas) 24.2 mJ
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 4.9mm
Width 5.89mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4390 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SI7465DP-T1-E3

The SI7465DP-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 60V 3.2A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7465DP-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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