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IXTT38N30L2HV

  • IXTT38N30L2HV
  • IXTT38N30L2HV

IXTT38N30L2HV

IXTT38N30L2HV

IXYS

DISC MOSFET N-CH LINEAR L2 TO-26

SOT-23

IXTT38N30L2HV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.78000 $19.78
500 $19.5822 $9791.1
1000 $19.3844 $19384.4
1500 $19.1866 $28779.9
2000 $18.9888 $37977.6
2500 $18.791 $46977.5

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