IXXH75N60B3

new-10%

Manufacturer part number:IXXH75N60B3

Manufacturer:IXYS

Description:DISC IGBT XPT-GENX3 TO-247AD

Case Package:SOT-23

Datasheet:IXXH75N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Series	XPT™, GenX3™
Part Status	Active
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Reach Compliance Code	compliant
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	75ns
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	160A
Power Dissipation-Max (Abs)	750W
Turn On Time	108 ns
Test Condition	400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 60A
Turn Off Time-Nom (toff)	315 ns
IGBT Type	PT
Gate Charge	107nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	35ns/118ns
Switching Energy	1.7mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant