IXXN200N60B3

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Manufacturer part number:IXXN200N60B3

Manufacturer:IXYS

Description:IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

Case Package:SOT-23

Datasheet:IXXN200N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Published	2013
Series	XPT™, GenX3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	940W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
JESD-30 Code	R-PUFM-X4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	940W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	280A
Current - Collector Cutoff (Max)	50μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	9.97nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 100A
Turn Off Time-Nom (toff)	395 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	9.97nF @ 25V
RoHS Status	ROHS3 Compliant