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IXZ210N50L

  • IXZ210N50L
  • IXZ210N50L

IXZ210N50L

IXZ210N50L

IXYS

IXZ210N50L datasheet pdf and Transistors - FETs, MOSFETs - RF product details from IXYS stock available on our website

SOT-23

IXZ210N50L Datasheet

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Specifications
Name Value
Type Parameter
Package / Case 6-SMD Module
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Packaging Tube
Published 2004
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 175°C
Max Power Dissipation 470W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 175MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Transistor Application AMPLIFIER
Rise Time 4ns
Drain to Source Voltage (Vdss) 500V
Transistor Type N-Channel
Continuous Drain Current (ID) 10A
Gain 16dB
Power - Output 200W
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 1Ohm
Voltage - Test 50V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
IXZ210N50L Product Details

IXZ210N50L Description


The IXZ210N50L is an N-Channel Enhancement Mode Linear 1 75MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation.



IXZ210N50L Features


  • Isolated substrate

    - nigh Isolation voltage (>2500V)

    -excel ent themal transter

    -Increased temperature and power

  • cycling capability

  • IXYS RF Low Capacitance Z-MOSTM Process

  • Very low Insertion Inductance (- 2nH)

  • No beryllium oxide (BeO) or other hazardous materials



IXZ210N50L Applications


  • Class AB & C,

  • Broadcast & Communications Applications


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