APTGT200A170D3G

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Manufacturer part number:APTGT200A170D3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1700V 400A 1250W D3

Case Package:SOT-23

Datasheet:APTGT200A170D3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D-3 Module
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	1.25kW
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	11
JESD-30 Code	R-XUFM-X11
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	1250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	400A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Input Capacitance	17nF
Turn On Time	400 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 200A
Turn Off Time-Nom (toff)	1200 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	17nF @ 25V
RoHS Status	RoHS Compliant