MKI75-06A7

new-10%

Manufacturer part number:MKI75-06A7

Manufacturer:IXYS

Description:MOD IGBT H-BRIDGE 600V 90A E2

Case Package:SOT-23

Datasheet:MKI75-06A7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E2
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2005
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	280W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MKI
JESD-30 Code	R-XUFM-X14
Qualification Status	Not Qualified
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	280W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	90A
Current - Collector Cutoff (Max)	1.3mA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Input Capacitance	3.2nF
Turn On Time	100 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 75A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.2nF @ 25V
Height	17mm
Length	107.5mm
Width	45mm
RoHS Status	ROHS3 Compliant