MMIX1F160N30T

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Manufacturer part number:MMIX1F160N30T

Manufacturer:IXYS

Description:MOSFET SMPD MOSFETs Power Device

Case Package:SOT-23

Datasheet:MMIX1F160N30T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	21
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	GigaMOS™, HiPerFET™, TrenchT2™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	21
Number of Elements	1
Power Dissipation-Max	570W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	570W
Case Connection	ISOLATED
Turn On Delay Time	34 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	102A Tc
Gate Charge (Qg) (Max) @ Vgs	335nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	102A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.02Ohm
Pulsed Drain Current-Max (IDM)	440A
DS Breakdown Voltage-Min	300V
Avalanche Energy Rating (Eas)	3000 mJ
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant