MMIX1F40N110P

new-10%

Manufacturer part number:MMIX1F40N110P

Manufacturer:IXYS

Description:MOSFET SMPD MOSFETs Power Device

Case Package:SOT-23

Datasheet:MMIX1F40N110P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	HiPerFET™, PolarP2™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	21
JESD-30 Code	R-PDSO-G21
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	53 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	290m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	310nC @ 10V
Drain to Source Voltage (Vdss)	1100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	40V
Drain-source On Resistance-Max	0.29Ohm
Pulsed Drain Current-Max (IDM)	100A
DS Breakdown Voltage-Min	1100V
Avalanche Energy Rating (Eas)	2000 mJ
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant