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FDMS8692

  • FDMS8692
  • FDMS8692

FDMS8692

FDMS8692

ON Semiconductor

FDMS8692 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS8692 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.5W Ta 41W Tc
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 28A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.46000 $0.46
500 $0.4554 $227.7
1000 $0.4508 $450.8
1500 $0.4462 $669.3
2000 $0.4416 $883.2
2500 $0.437 $1092.5
FDMS8692 Product Details

FDMS8692 Description


FDMS8692 is an N-channel Power Trench? MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 30V. The operating temperature of the  FDMS8692 is -55??C~150??C TJ and its maximum power dissipation is 2.5W. The FDMS8692 has been created to reduce losses in applications involving power conversion. The lowest rDS(on) with excellent switching performance has been achieved by combining improvements in silicon and package technologies.



FDMS8692 Features


  • Max rDS(on) = 9.0m:at VGS = 10V, ID = 12A

  • Max rDS(on) = 14.0m: at VGS = 4.5V, ID = 10.5A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • RoHS Compliant



FDMS8692 Applications


  • Low Side for Synchronous Buck to Power Core Processor

  • Secondary Side Synchronous Rectifier

  • Low Side Switch in POL DC/DC Converter

  • Oring FET/ Load Switch


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